FERROMAGNETIC-ANTIFERROMAGNETIC EXCHANGE BIASED SYSTEMS DEPOSITED ONTO SUB-100nm PRE-PATTERNED DOTS
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چکیده
The study of exchange bias in nanostructures is interesting from both fundamental and technological points of view. From a fundamental point of view, the reduction of the lateral dimensions in ferromagnetic (FM)-antiferromagnetic (AFM) systems can cause significant alterations of the domain structure of the layers, hence leading to substantial changes in the magnitudes of the exchange bias field, HE, and coercivity, HC, or in the asymmetry of the hysteresis loops [1]. From a technological point of view, the study of exchange bias in nanostructures is triggered by the tremendous increase in the areal density of magnetic data storage achieved during the last years. Reading heads are typically composed of spin valve or tunnel junction structures, in which FM-AFM exchange biased bilayers constitute an essential part [2]. Therefore, the increase in the areal density requires a miniaturization of the magnetic devices based on FM-AFM structures.
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تاریخ انتشار 2004